| PART |
Description |
Maker |
| APT1201R6 APT1201R6B APT1201R6BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 8A 1.600 Ohm
|
http://
ADPOW[Advanced Power Technology]
|
| APT12080LVR |
POWER MOS V 1200V 16A 0.800 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| ISL9K30120 ISL9K30120G3 |
30A, 1200V Stealth?/a> Dual Diode
30A, 1200V Stealth⑩ Dual Diode
30A, 1200V Stealth Dual Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| RURG30120CC FN3400 |
30A/ 1200V Ultrafast Dual Diode
30A, 1200V Ultrafast Dual Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| RJH1CD7DPQ-E0 |
1200V - 30A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJK03M6DPA RJK03M6DPA-00-J5A |
30V, 30A, 9.4m max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6018DPM-00T1 |
600V - 30A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| FGW30N120HD |
Discrete IGBT (High-Speed V series) 1200V / 30A
|
Fuji Electric
|
| APT30D120B ADVANCEDPOWERTECHNOLOGYLTD.-APT30D120B |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE 1200V 30A
|
Advanced Power Technology
|
| RJH1CV6DPQ-E013 |
1200V - 30A - IGBT Application: Inverter
Short circuit withstand time (5 us typ.)
|
Renesas Electronics Corporation
|
| U30D30 U30D40 U30D50 U30D60 U30D40A |
Switchmode dual ultrafast power rectifier, 30A, 400V, 50ns
POWER RECTIFIERS(30A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
